ZrO2 and HfO2 as alternative gate dielectrics:
similarities and dissimilarities
Alexander A. Bagatur'yants1 (
) and A.A. Korkin
2
1KINETIC TECHNOLOGIES Ltd, Moscow, Russia.
2Semiconductor Products Sector, Motorola Inc., AZ 85202, USA
A comprehensive review of experimental and theoretical data is given on the
physical and chemical properties of ZrO2 and HfO2 with regard to their
possible use as alternative high-K gate dielectrics. Special emphasis is
placed on thin ZrO2/HfO2 film growth, structure, and dielectric properties.
Available experimental data are critically analyzed in comparison with the
results of theoretical calculations. Though the two oxides are very close in
their chemical and physical properties, some important dissimilarities in
their behavior are revealed in theoretical and experimental studies. The role
of these similarities and dissimilarities between ZrO2 and HfO2 is analyzed in
connection with microelectronic applications.
