Vortex Lattice Memory Cells L.V.Belevtsov Department of Applied Mathematics, Donbass Engineering Academy, 84313, Kramatorsk,Ukraine, e-mail: apmath@dgma.donetsk.ua Memory devices in which Abricosov vortices are used as information bits, have been proposed in the end of 70’s for the first time [1]. Further improving did not give an increasing of the fast write-in (read-out) operations sufficiently. By employing an superconducting screens, the vortex can be increasing to several times only that of the cell structure without them [2]. We have analyzed theoretically the memory cell based on the type-II vortex phase transition with both the capacitor design and one used the demagnetization effect that would be effective in the write-in current level. In so doing, there are two current state stabled in the superconducting state. Calculation show that the fast write-in operation may be reached approximately by ~10-12 sec at the temperatures lower than the superconducting phase transition one of high-Tc superconductors. We discuss the design and limiting factors of these devices in view of their use as the operated memory cells in the future computers. [1] A.F. Hebard and A.T.Fiory, AIP Conf. Proc. 44,465 (1978). [2] L.V.Belevtsov, Mod.Phys.Lett. B15, 183 (2001).