The new proposal of a far-infrared laser employing intraband transitions in the system of quantum dots is presented [1]. Quantum dot matrix created by an electric-field focusing in narrow GaAs/AlGaAs quantum well is examined as the model, and the conditions for inversion of population of the dot matrix are discussed. The laser is planned to be pumped by periodically repeated rapid creation and destruction of the quantum dot matrix allowing for repeated filling of the dot levels with electrons from a quantum well. The kinetics of the electron-photon system is analyzed in details in order to determine the characteristics of pumping signal and other laser parameters. The proposal seems to be promising in view of nano-integrated electron-optical system. Such a system employs possible advantages and flexibility of the field-created dot structures, which could be applied to the classical and the quantum information processing. [1] Jacak et al. to be published in Phys. Rev. A (6 June 2002)