)The Pennsylvania State University, Materials Science, University Park, PA 16802, USA
)Many reliability problems in metal-oxide-silicon (MOS) technology have been quite carefully and extensively characterized in a purely "electronic" sense. However, quite sophisticated "electronic" characterization has not always been accompanied by even a rudimentary understanding of the atomic scale defects involved. Such an understanding would be useful in building and reliability. [1]
A fundamental understanding of the imperfections involved in many MOS reliability problems has developed in recent years, in large part via magnetic resonance studies. [2] Although imperfect and incomplete, a rudimentary understanding of the several defects which dominate Si/SiO2 interface trap generation, oxide deep levels involved in stress induced leakage currents and (in thicker oxides) charge trapping now exists.
In this presentation, I'll explain how magnetic resonance measurement techniques can be applied to metal-insulator-silicon systems and summarize what we know about the structure and electronic properties of the most important of the more than a dozen electronic defects identified to date through magnetic resonance studies of metal-insulator-silicon systems. The presentation will focus upon defects involved in oxide leakage currents and Si/SiO2 interface instabilities. However, other trapping centers in oxides, nitrides, oxynitrides, and BPSG interlevel dielectrics will also be reviewed.
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