Nikulov V. Nikulov (

)
Institute of Microelectronics Technology and High Purity Materials,
Russian Academy of Sciences, 142432 Chernogolovka,
Moscow District, Russia.
Because of non-zero friction of the Brownian motion a work should be
performed at this first mesoscopic phenomenon discovered as long ago as in
the beginning of 19 century and described as one of the fluctuation
phenomena in the beginning of 20 century [1]. The progress of modern
nano-technology and the discovery of the direct Brownian motion [2] allow
to use this phenomenon for an useful work.
Nano-scale quantum power source can be made on the base of a system of
inhomogeneous mesoscopic superconducting loops [3]. The power of the
persistent voltage predicted [2] and observed [4] on segment of such loop
is not random and can be added in contrast to the random power of the
Nyquist's (Johnson's) noise [5]. Therefore a power value acceptable for
some application can be obtained by means of the system of great number of
nano-scale loops in spite of very weak power of any fluctuations,
at T = 100 K. The modern
methods of nano-technology allow to make the system of 10
loops on an
area
. Such system of high-Tc superconductor loops
can give the dc power up to 1 Wt. The power can be increased in many times
by the use of multi-layer technology.
References:
- R.P. Feynman, R.B. Leighton and M. Sands. The Feynman Lectures on
Physics, v I. Reading, Massachusetts: Addison-Wesley Publishing Company,
1963.
- A.V. Nikulov, Phys. Rev. B 64, 012505 (2001)
- A.V. Nikulov, Abstracts of NATO ASI ``Quantum Mesoscopic Phenomena and
Mesoscopic Devices in Microelectronics'' Ankara, Turkey, p.105, (1999);
Proceedings of the Symposium on Micro- and Nanocryogenics, Jyvaskyla,
Finland, p.68, (1999); in SUPERMATerials, Eds. R.Cloots et al. Kluwer
Academic Publishers, p.183 (2000); V.V. Aristov and A.V. Nikulov, Abstracts
of Fourth APAM Topical Seminar, Seoul, Korea, p.25, (2000).
- S.V. Dubonos, V.I. Kuznetsov, A.V. Nikulov and V.A.Tulin, Abstracts of
the Russian Conference ``Micro- and Nano-Electronics'', Lipki, Moscow
Region, P2-25, (2001).
- H.Nyquist, Phys.Rev. 32, 110 (1928); J.B.Johnson, idid. 32, 97 (1928)