The perspective of nanostructure fabrication in “silicon – germanium” systems is associated with device applications and with peculiarities of their formation processes, based on the effect of selforganization. At present the manufacturing methods of such structures are still based either on CVD-processes or on molecular-beam epitaxy processes. This work is devoted to the results of fabrication of such structures by means of ion implantation. We used Ge ion beams with the following parameters: energy E=50 and 150 keV, ion beam density 5 mkÀ·ñm-2, the implanted dose varied from 1015 to 1017 ñm-2. The analysis of implanted structures was carried out by Atomic-Force Microscope (AFM) in combination with phase analysis and Fourier analysis of surface images and by Secondary Ion Mass Spectrometry (SIMS). The measurements were performed both directly after implantation and after subsequent annealing. After implantation we observed the structuring of silicon surface, at the same time the dimensions of typical elements increased under increasing of implantation dose. Fourier analysis showed that in this case such structures were well-ordered and their elements had dimensions in nanometer range. According SIMS measurements after implantation introduced germanium atoms had standard depth distribution. No evidence of Ge accumulation on the silicon surface was observed. The formation of wellordered structure on the silicon surface after germanium implantation in our opinion is associated with the formation of germanium-enriched clusters within implanted layer. Ion beam induced clusterization gives, on the one hand, new capabilities for fabrication of Si-Ge nanostructures, on the other hand should be taken into account when germanium implantation is used for silicon preamorphization during shallow junctions formation.