Symposium and Summer School on:
Nano and Giga Challenges in Microelectronics
Research and Opportunities in Russia
Moscow, September 10-13, 2002

Symposium
September 12 - 13, 2002

Thursday, September 12, 2002

12-POSev Thursday, September 12 -- Poster Session (20:00 - 22:00)
Chairmen: Scott Hector and Alex Volinsky
Poster Boards are 1.5m high and 1m wide
P001 Izida Kh. Abdukadirova
Institute of Nuclear Physics, Academy of Sciences of Uzbekistan. BOX 702132, Tashkent, Ulugbel, Uzbekistan.
Atomic size of irradiated advanced materials evaluation [ABDUKADIROVA]
P002 Takahisa Adachi and K.Yamashita
Chemical System Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo Tokyo 113-8656, Japan.
Quantum chemical study on the dielectric constant of siloxane derivatives [ADACHI]
P003 Alexander M. Alexeev 1, A. F. Popkov1, N. I. Polushkin2, V. I. Korneev3
 1NT-MDT Co, State Research Institute of Physical Problems, 103460 Moscow, Russia.
 2Institute for Physic of Microstructures, 603950 Nizhnii Novgorod, Russia.
 3Moscow Institute for Electronic Engineering, 103482 Moscow, Russia.

Study of the magnetization states of eliptical Fe(Co)Cr particles [ALEXEEV]
P004 Yahya I. Alivov1, B. M. Ataev2, M. V. Chukichev3, V. V. Mamedov2, V.I. Zinenko1, Yu. A. Agafonov1, A. N. Pustovit1
1 Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka,142432 Moscow district, Russia.
2 Institute of Physics, Daghestan Scientific Centre of the Russian Academy of Sciences, M.Yaragy, 94, 367003 Makhachkala, Russia.
3Department of Physics, Moscow State University, Vorob'evy gory, Moscow, Russia.

P-type ZNO films obtained by N+ implantation of ZNO:GA films [ALIVOV]
P005 Pavel D. Altukhov
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya st. 26, St. Petersburg 194021, Russia.
The tullistor: a new quantum many-function device [ALTUKHOV]
P006 Elena S. Apostolova1, A. P. Tikhonov2
1Assistant Professor, Department of Quantum Chemistry, D.I.Mendeleev University of Chemical Technology of Russia, Miusskaya Square 9, 125047 Moscow, Russia.
2Dean of the College for Composite Materials,D.I.Mendeleev University of Chemical Technology of Russia, Miusskaya Square 9,125047 Moscow, Russia.
Fe(CO)5 + Fe(CO)4 -> Fe2(CO)9 mechanism for nanotechnology [APOSTOLOVA]
P007 Alexander A. Bagatur'yants1, A. A. Safonov1, and A.A. Korkin2
1 KINETIC TECHNOLOGIES Ltd, Moscow, Russia.
2Semiconductor Products Sector, Motorola, Mesa, AZ85202, USA
Embedded cluster calculations of oxygen vacancies in the bulk and at the surface of tetragonal ZrO2 [BAGATURYANTS1]
P008 Leonid V. Belevtsov
Department of Applied Mathematics, Donbass Engineering Academy, 84313, Kramatorsk, Ukraine.
Vortex lattice memory cells [BELEVTSOV]
P009 Serge A. Beznosyuk
Altai State University, Lenin Avenue,61,656099,Barnaul,Russia.
Genesis of quantum nanosystems: topological and informational aspects [BEZNOSYUK]
P010 Yu. F. Biryulin1, D. A. Syckmanov1, S. S. Moliver2, S. E. Orlov2, S. N. Mikov2, A. V. Novoselova3, M. A. Yagovkina4
1Physics for Cluster Structures Lab, Ioffe Physico-Technical Institute, RAS, Polytechnicheskaya st. 26, 194021, St-Petersburg, Russia.
2 Ulyanovsky State University, Ulyanovsk, Russia.
3 Institute of Macromolecular Compounds RAS, St-Petersburg, Russia.
4 NPO Mechanobr, St-Petersburg, Russia.

The investigation of C60 fullerene films on polymeric substrates [BIRYULIN]
P011 Lucjan Jacak1, Jurij Krasnyj2,3, Dorota Jacak4, Liliana Bujkiewicz1
1Institute of Physics, Wroclaw University of Technology, Wyb. Wyspianskiego 27, Wroclaw, Poland.
2Institute of Mathematics, University of Opole, Oleska 48, Opole, Poland.
3on leave from: Institute of Physics, Odessa University, Odessa, Ukraine.
4Institute of Mathematics, Wroclaw University of Technology, Wyb. Wyspianskiego 27, Wroclaw, Poland.

Far infrared laser on quantum dots created by electric-field focusing [BUJKIEWICZ]
P012 Evgeni A. Burovski, and I.Ya.Polishchuk
Kintech Inc., Moscow, Russia.

A self-consistent modeling of the leakage current through thin oxides [BUROVSKI]
P014 Olga P. Chikalova-Luzina1, T. Matsumoto2
1A. F. Ioffe Physical Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia.
2 Research and Development Center, Stanley Electric Corporation, 1-3-1, Eda-nishi, Aoba, Yokohama 225-0014, Japan.
Ratio of deuterium to hydrogen termination on silicon surface in gas phases and in aqueous electrolyte solutions [CHIKALOVA]
P015 Olga Loza1, Irina Shakleina2, Yuri Chizhov1
 1Faculty of Physics, Photonics Department, St. Petersburg State University, 198904 St. Petersburg, Russia.
 2Advanced Research Center, Sankt-Petersburg State Technical University, 194021 St. Petersburg, Russia.
The diferrocenyl cumulene molecular wires: density functional theory study [CHIZHOV]
P016 Maxim Deminsky, A. Knizhnik, I. Belov, S. Umanskii, E. Rykova, A. Bagatur'yants, B. V. Potapkin, and A. A. Korkin
RRC Kurchatov Institute, HEPTI, Moscow, Russia.
Mechanism and kinetics of zirconium and hafnium oxides thin film growth in ald reactor [DEMINSKY]
P017 E. A. Cheremukhin, Alexey I. Chulichkov , E. A. Ghachev
Department of Physics, Computer Methods In Physics, Moscow State University, Vorobyevy Gory, 119899 Moscow, Russia.
Modeling of emission spectra and SEM images formation on electron emission sensors [CHULICHKOV]
P018 Alexander N. Denisov, A. S. Biriukov, and K. M. Golant
Fiber Optics Research Center at the General Physics Institute of the Russian Academy of Sciences, 38 Vavilov St., 119991 Moscow, Russia.
Kinetics of undoped silica deposition process in plasma-chemical SPCVD technology [DENISOV]
P019 Artur T. Dideykin, V. O. Naidenov, A. V. Naschekin, G. M. Gusinsky, Z. G. Tzareva, E. P. Golovko, A. Ya. Vul'
Ioffe Physico-Technical Institute, 26 Polytechnicheskaya str. 194021, St.Petersburg, Russia.
Structures for cold electron emitters based on nanodiamonds [DIDEYKIN]
P104 V. S. Dneprovskii, V. P Evtikhiev*, V. P. Kochereshko*, O. A. Shaligina, E. A. Zhukov
M. V. Lomonosov Moscow State University, Moscow, Russia.
*Ioffe Physico-Technical Institute RAS, St Petersburg, Russia.

Carrier Injection and Relaxation in Self-Assembled CdSe/ZnSe Quantum Dots [DNEPROVSKII]
P020 Sergey Dobrin, Javier B. Giorgi, Tae Geol Lee, Hong He, Fedor Y. Naumkin, John C. Polanyi, Sergei A. Raspopov and Jiaxi Wang
Department of Chemistry, University of Toronto, Toronto, Ontario, Canada M5S 3H6.
Photoinduced charge-transfer reactions between alkali metal clusters and hydrogen halides (HX, X = F, CL, BR) adsorbed on LiF. [DOBRIN]
P021 Abdurauf Dzhurakhalov
Arifov Institute of Electronics, F.Khodjaev Street 33, 700187 Tashkent, Uzbekistan.
Application of grazing ion bombardment for analysis and modification of single crystal surfaces [DZHURAKHALOV]
P022 Irina Edelman1, R. Ivantsov1, A. Vasiliev1, O. Bajukov1, A. Balaev1, T. Isaeva1, S. Stepanov2, E. Kornilova2, T. Zarubina2
1L.V.Kirensky Institute of Physics SB RAS, 660036 Krasnoyarsk, Russia.
2S.I.Vavilov Optical State Institute, 192371 S.-Peterburg, Russia.

Magneto-optical effects in nanocomposites consisting of ferrite nano-particles dispersed in oxide glass matrix [EDELMAN]
P023 Simon D. Elliott and Jim Greer,
NMRC, University College Cork, Ireland.
First principles study of alumina growth by CVD [ELLIOT-S]
P024 E. M. Epshtein1, R. J. Elliott2, and P. E. Zilberman1
 1Institute of Radio Engineering and Electronics of the Russian Academy of Sciences, Fryazino Moscow District 141190 Russia.
 2University of Oxford, Department of Physics, Theoretical Physics, Oxford, UK

Magnetization reversal and current hysteresis under spin-injection conditions [EPSHTEIN]
P025 A. Estève1, M. Djafari Rouhani1,2, Y.J. Chabal3
1LAAS-CNRS, 7 av. du Colonel Roche, 31077 Toulouse, France
2Laboratoire de Physique des Solides, 118 route de Narbonne, 31062 Toulouse, France
3Materials Research, Agere Systems, 600 Mountain Avenue, Murray Hill, NJ 07974, USA

Linking Kinetic Monte Carlo, first principle calculations and infrared spectroscopy to depict the basic mechanisms of silicon oxidation [ESTEVE]
P026 withdrawn
P027 withdrawn
P028 Takahisa Adachi and K.Yamashita
Chemical System Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo Tokyo 113-8656, Japan.
Quantum chemical study on the dielectric constant of siloxane derivatives [ADACHI]
P029 Alex Fedoseyev, V. Kolobov, R. Arslanbekov, A. Przekwas
CFD Research Corporation, 215 Wynn Drive, Huntsville, Alabama 35805, USA
Kinetic simulation tools for nano-scale semiconductor devices [FEDOSEYEV]
P030 A. Yu. Aleynikov1, N. S. Ganchuk1, P. V. Yermakov1, Anatoli A. Korkin2, A. A. Selezenev1
1Sarov Open Computing Center, Zernova 53 Sarov, Nizhni Novgorod Region 607185, Russia.
2SPS Motorola Aadvanced Modeling and Simulation M360, 2200 W.Broadway Rd, Mesa AZ 85296, USA
Molecular-dynamic code to simulate the properties of materials with covalent chemical bonds (SAGE MD) [GANCHUK]
P031 Vladimir K. Golubev
Molecular Dynamics Group, Sarov Open Computer Center, 53 Zernov St., Sarov, 607190 Russia.
A study of the pseudo-binary systems M-Si-O (M = Zr, Hf, Ti, Al, Y, La, Ta) using cluster approach [GOLUBEV]
P032 Olga V. Goncharova, V. S. Kalinov, A. P. Voitovich
Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, F. Scaryna Prospect 70, 220072 Minsk, Belarus.
The influence of gamma irradiation on photoluminescence and nonlinear optical response of silica films activated by semiconductor nanocrystals [GONCHAROVA]
P033 Eugene A. Grachev, Nikolay N. Negulyaev
Lomonosov MSU, Physics, Vorobyovy Gory, Moscow 119899, Russia.
Simulation of a charge relaxation in dielectric specimen [GRACHEV]
P034 Anatoly E. Patrakov1, G. M. Zhidomirov2, V. A. Gritsenko1
1Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Pr. Akad. Lavrentieva 13, Novosibirsk 630090, Russia.
2Boreskov Institute of Catalysis, Novosibirsk, Siberian Branch of the Russian Academy of Sciences, Pr. Akad. Lavrentieva 5, Novosibirsk 630090, Russia.
Ab initio calculations of the Frenkel defect in SiO2 [GRITSENKO1]
P035 Cornelis H. de Groot, V. D. Kunz, P. Ashburn, D. Donaghy*, and S. Hall*
Department of Electronics & Computer Science, University of Southampton, Southampton SO17 1BJ, England.
*Department of Electrical Engineering & Electronics, University of Liverpool, Liverpool, L69 3BX, England.
Ion-implanted vertical MOSFET's [DE_GROOT]
P036 Takashi Ikegami, and K. Yamashita
Dept. of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
Theoretical Study on The Dielectric Constant of Interlayer Dielectrics [IKEGAMI]
P037 Aleksandr I. Il'in, B. N. Tolkunov, L. I. Aparshina
Institute of Microelectronics Technology, RAS, 142432, Chernogolovka, Moscow Region, Russia.
Quantum Transport of "Light" Electrons in The Bridges From Large-Grained Thin Bismuth Films. [ILIN]
P038 Inna M. Iskandarova1, A. A. Knizhnik1, E.A. Rykova1, A. A. Bagatur'yants1, A. A. Korkin2 and B. V. Potapkin1
1Kinetic Technologies, Kurchatov Sq. 1, 123182, Moscow, Russia.
21Semiconductor Products Sector, Motorola Inc., 2200 W. Broadway Road, Mesa, AZ 85202, USA
First principle investigation of hydroxylation of zirconia and hafnia surfaces [BAGATURYANTS2]
P039 Yu. D. Ivanov, V. Yu. Kuznetsov, and A.I. Archakov
Institute of Biomedical Chemistry RAMS, Pogodinskaya 10 str, Moscow, Russia, 119992.
protein AFM nanochips for incestigation of P450- monooxygenase systems [IVANOV]
P040 Vladimir V. Ivin1, Mihail V. Silakov1, George A. Babushkin1, Bing Lu2, Pawitter Mangat2, Kevin Nordquist3, Douglas J. Resnick3
1SOFT-TEC, Nakhimovsky Prst. 34, Moscow 117218, Russia.
2Motorola, Adv. Process Dev. & Ext. Research, DigitalDNA Laboratories, 7700 S. River Parkway, Tempe, AZ 85284, USA
3Motorola Labs, 7700 S. River Parkway, Tempe, AZ 85284, USA
Modeling and Simulation Issues in Monte Carlo Calculation of Electron Interaction with Solid Targets [IVIN]
P041 Vladimir Kalinin
Engineering Solution Int. Ltd., Howth Junction Business Park, Dublin-5, Ireland.
Comparative study of Sin and SinHn clusters with hollow and compact structure. [KALININ_V1]
P042 Vladimir Kalinin
Engineering Solution Int. Ltd.,Howth Junction Business Park, Dublin-5, Ireland.
EB PVD coating of gold for semiconductor devices - Monte-Carlo simulation. [KALININ_V2]
P043 Vladimir Kalinin
Engineering Solution Int. Ltd., Howth Junction Business Park, Dublin-5, Ireland.
Numerical study of atmospheric pressure CVD reactor [KALININ_V3]
P044 Yu. E. Kalinin, A. V. Sitnikov, O. V. Stognei
Voronezh State Technical University, Voronezh, Russia.
AMORPHOUS METAL-DIELECTRIC CERMETS [KALININ_YU]
P045 O. V. Goncharova, Vladimir S. Kalinov, A. P. Voitovich
Institute of Molecular and Atomic Physics, National Academy of Sciences of Belarus, F. Scaryna Prospect 70, 220072 Minsk, Belarus.
Optical and structural properties of films and multilayer thin film structures with nanometer-sized LiF, CaF2 crystals [KALINOV]
P046 O. N. Ermakov1, M. G. Kaplunov2, O. N. Efimov2, I. K. Yakushchenko2, M. Yu. Belov2, M. F. Budyka2
1Joint-Stock Scientific and Technological Co Sapphire, Moscow, Russia. 2Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow Region, Russia.
Hybrid organic-inorganic light-emitting diodes [KAPLUNOV]
P047 V. E. Buravtsovaa, E. A. Gan'shinaa, V. S. Guschina, Sergej I. Kasatkinb, A. M. Muravjevb, Ferdo A. Pudoninc
 aLomonosov Moscow State University, Faculty of Physics, Moscow, Russia.
 bInstitute of Control Sciences, RAS, Moscow, Russia.
 cLebedev Physical Institute, RAS, Moscow, Russia.

Investigation of magnatic and magnetooptic properties of nanostructure with FeNi and SiC layers [KASATKIN]
P048 Artem V. Kholodkov, Konstantin M. Golant, I. V. Nikolin
Fiber Optics Research center at GPI RAS, Moscow, Russia.
Nano-scale compositional lamination of doped silica glass deposited in surface discharge plasma of SPCVD technology. [KHOLODKOV]
P049 Teimuraz N. Khoperia
E. Andronikashvili Institute of Physics, Georgian Academy of Sciences, 6 Tamarashvili St., 380077 Tbilisi, Georgia.
Nanomaterials and Nanodevices Fabricated by Electroless Technologies [KHOPERIA]
P050 A. Kidiyarova-Shevchenko1, K. Platov1, Ya. Alekseev1, I. Kataeva2, E. Tolkacheva2
1Chalmers University, Microelectronics and Nanoscience, MC2, Kemivagen 9, SE-41261 Gothenburg, Sweden.
2Moscow State University, Moscow, Russia.
Hardware Architecture for Multiuser Detector. [KIDIYAROVA-SHEVCHENKO]
P051 Vladimir Kolobov, and Robert Arslanbekov
CFD Research Corporation, Huntsville, AL 35805, USA
Deterministic Boltzmann solver for Electron Kinetics in Plasma Reactors for Microelectronics Applications [KOLOBOV]
P052 Victor M. Kornilov, A. N. Lachinov
Institute of Molecular and Crystal Physics of Ufa Research Center of RAS 450075, Ufa, Russia.
STM Surface Modification of Si-SiO2-Polymer System [KORNILOV]
P053 withdrawn
P054 withdrawn
P055 Leonid Kuzmin
Department of Physics, Chalmers University of Technology, S-41296 Göoteborg, Sweden.
Novel concepts of the hot-electron nanobolometers for THz space applications [KUZMIN]
P056 Ken M. Flurchick1, Jan K. Labanowski2
1East Carolina University, Department of Physics, 740 Greenville Blvd PMB 261, Greenville NC 27858, USA
2Ohio Supercomputer Center, 1224 Kinnear Rd, Columbus, OH 43212, USA
Computational Portals for Chemistry and Materials Science [LABANOWSKI]
P057 withdrawn
P058 Nikolay G. Lebedev, M. B. Belonenko
Volgograd State University, 2-ya Prodol'naja 30, Volgograd, 400062, Russia.
About mechanism of indirect interactions of spins in carbon nanotubes [LEBEDEV]
P059 Nikolay G. Lebedev, I. V. Zaporotskova, L. A. Chernozatonskii
Volgograd State University, Physics Dept., 2-ya Prodolnaya 30, Volgograd 400062, Russia.
Fluorination of carbon nanotubes within molecular cluster method [LEBEDEV1]
P060 K. I. Lee1, Wooyoung Y. Lee1,3, and K. H. Shin1, J. G. Ha2, J. H. Lee3 and K. Rhie3
1Nano Device Research Center, Korea Institute of Science and Technology, POB 131, Seoul 130-650, Korea.
1Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Korea.
3Department of Physics, Korea University, Seoul, Korea.
Optimization of Magnetotransport and Thermal Properties in Magnetic Tunnel Junctions by Rapid Thermal Anneal [LEE1]
P061 Yu. E. Lozovik, S. P. Merkulova, A. V. Minogin, A. M. Popov
Institute of Spectroscopy of Russian Academy of Science, 142190, Troitsk, Moscow region, Russia.
Nanomachines Based on Carbon Nanotubes [LOZOVIK]
P062 Patrick S. Lysaght1*, Brendan Foran1, Susanne Stemmer2, Gennadi Bersuker1, Robin Tichy1, and Larry Larson1
*Corresponding author
1International SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499, USA
2Rice University, 6100 Main Street, Houston, TX 77005-1892, USA
Thermal Response of Ultra-Thin MOCVD Hafnium Silicate Films [LYSAGHT]
P063 Roman V. Markov1, A. I. Plekhanov1, Z. M. Ivanova2, V. V. Shelkovnikov2
1Institute of Automation and Electrometry SB RAS, Novosibirsk, Russia.
2Novosibirsk Institute of Organic Chemistry, Novosibirsk, Russia.
Nonlinear properties of one-dimensional organic molecular aggregates in nanometer films [MARKOV]
P064 Nikolai N. Melnik1, T. N. Zavaritskaya1, V. A. Karavanski2
1Lebedev Physical Institute, Russian Academy of Sciences, Leninski pr. 53, Moscow, 119991 Russia.
2Center of Natural-Science Research, Institute of General Physics, RAS, Russia.
Surface and bulk states of disordered carbon and their optical properties [MELNIK]
P065 withdrawn
P066 R. V. Mosin1,2, S. G. Ovchinnikov2, A. S. Parshin1
1Siberian goverment aerospace university, Krasnoyarsk, Russia.
2Institute of physics SB RAS. Krasnoyarsk, Russia.
Influence of desorption and point defects in kinetiñ model of layer-by-layer epitaxial growth. [MOSIN]
P067 Elvira I. Musina, G. G. Yusupova, V. V. Kalinin, D. G Yakhvarov, V. V. Zverev, V. I. Kovalenko, I. P. Romanova, O. G. Sinyashin
A. E. Arbusov Institute of Organic and Physical Chemistry, Kasan Research Center of Russian Academy of Sciences, 8 Akad. Arbusov st., Kazan, 420088, Russia.
Fullerene-containing acceptors for the realizing semiconductive materials. [MUSINA]
P068 Masashi Nakatomi, T. Nakajima and K. Yamashita
Dept. of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
A DFT study on the reaction mechanism of aluminum film growth by CVD [NAKATOMI]
P069 Olga V. Naumova, I. V. Antonova, V. P. Popov, Yu. V. Nastaushev, T. A. Gavrilova, L. V. Litvin, A.L. Aseev
Institute of Semiconductor Physics, 630090, Lavrentieva 13, Novosibirsk, Russia.
silicon-on-insulator structures for nano-scaled devices [NAUMOVA]
P070 M. O. Nestoklon, E. L. Ivchenko
A. F. Ioffe Physical-Technical Institute, 194021 St.Petersburg, Russia.
Optical transitions at a type-II interface in the sp3 tight-binding model [NESTOKLON]
P071 I. I. Bobrinetskii1, Vladimir K. Nevolin1, V. I. Petrik2, Yu. A. Chaplygin1
1Moscow State Institute of Electronic Engineering, Moscow, Russia.
2Research Institute of Physics of Fullerenes and Novel Materials MIET, Moscow, 124498 Russia.
Current-voltage characteristics of two-electrode devices with carbon nanotubes [NEVOLIN]
P072 A. V. Nikolaev
Samsung Electronics Co., Ltd., Representative Office in Russia, Research 1, Str. 2, B. Gnezdnikovsky Per., Moscow, 103009, Russia.
Samsung's Strategy for Nanotechnology and Research Collaboration in Russia [NIKOLAEV1]
P073 Nikulov V. Nikulov
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia.
Nano-Scale Quantum Power Source [NIKULOV]
P074 Alexander N. Obraztsov, Artyom P. Volkov, Al. A. Zakhidov, D. A. Lyashenko
Physics Department, Moscow State University, Moscow 119899, Russia.
Nano-Carbon Materials for Vacuum Electronics [OBRAZTSOV]
P075 Vladimir V. Osipov, I. V. Kochev, S. V. Naumov
Institute of Metal Physics, 18, Kovalevskaya St., 620219 Ekaterinburg, Russia.
The nanolayer with the giant electric conductivity at the CuO-Cu interface: the possibility of the interfacial HTSC. [OSIPOV]
P076 Vladimir V.Osipov, N. A. Viglin
Institute of Metal Physics, 18, Kovalevskaya St., 620219 Ekaterinburg, Russia.
Spin injection and spin transport: the possibylity of frequency tunanabled lasers and qantum amplifiers for 30 GHz - 3 THz range on the base of contacts ferromagnets (F) - semiconductor n-InSb (S) [OSIPOV1]
P077 withdrawn
P078 Konstantin Platov1, A. Kidiyarova-Shevchenko1, H. Zhao2, T. Ottosson2, E. Ström2
1Dept. of Microelectronics and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden.
2Dept. of Signal and System, Chalmers University of Technology, Gothenburg, Sweden.
System Design of an RSFQ Multiuser Detector [PLATOV]
P079 Inna V. Ponomareva, L. A. Chernozatonskii
Institute of Biochemical Physics RAS, Moscow, Kosygina 4, 119991, Russia.
Dynamic features of diamond nucleation in the cores of carbon onions. [PONOMAREVA]
P080 Stas Polonsky
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA

Time-Resolved Photon Emission Microscopy of Modern Integrated Circuits [POLONSKY]
P081 Sergei Postnikov, Scott Hector, César Garza, Vladimir Ivin*
Motorola, DigitalDNA Laboratories, Austin, TX 78731, USA
* JSC SOFT-TEC, Nakhimovsky prospect 34, Moscow 117218, Russia.
CD Error Budget Analysis for Low K1 Optical Lithography [POSTNIKOV]
P082 Brenda J. Postnikova, John Currie, Robert Hanes, Thomas Doyle, Eric V. Anslyn, Jason Shear, David Vanden Bout
University of Texas at Austin, Chemistry and Biochemistry, Welch A2600, Speedway, Austin, Texas 78712, USA
Fabrication of three-dimensional nanoscale structures using two-photon initiated polymerization and near-field excitation [POSTNIKOVA]
P083 Anatoliy Potseluyko1, I. Edelman1, A. Malakhovskii2, T. Zarubina3, A. Zamkov1, and A. Zaitsev1
1Institute of Physics, Akademgorodok, 660036 Krasnoyarsk, Russia.
2 Bar-Ilan University, 52900 Ramat-Gan, Israel.
3 S.I. Vavilov Optical State Institute, 193117 St.-Peterburg, Russia.

RE containing glasses as an effective magneto-optical materials for 200 - 400 nm range. [POTSELUYKO]
P084 Asit Baran Panda, Amita Pathak and Panchanan Pramanik
Department of Chemistry, Indian Institute of Technology, Kharagpur-721 302, India.
Chemical Preparation of Nano-sized SrBi4Ti4O15 Powders [PRAMANIK]
P085 Serghej L. Prischepa1, V. N. Kushnir1, C. Attanasio2
1Belarus State University of Informatics and RadioElectronics, P.Browka str., 6 Minsk 220013 Belarus.
2Physics Department "E.R.Caianiello", University of Salerno, via S.Allende, 84081 Baronissi, Italy.
Role of Boundary Conditions in Improving the Working Characteristics of Superconductor - Based Nanostructures [PRISCHEPA]
P086 A. P. Boltaev, A. O. Pogosov, N. A. Penin, Fedor A. Pudonin
Solid State Physics Department, P.N.Lebedev Physical Institute of Russian Academy of Science, 117924, Moscow, Leninsky Pr.53, Russia.
Photoconductivity and Dc-Conductivity of super thin metallic layers [PUDONIN]
P087 Bulat Z. Rameev1, F. Yildiz1, B. Aktas1, C. Okay2, R. I. Khaibullin3, E. P. Zheglov3, J. C. Pivin4, L. R. Tagirov5
1Gebze Institute of Technology, 41400 Gebze-Kocaeli, Turkey.
2Marmara University, 81040 Goztepe-Istanbul, Turkey.
3Kazan Physical-Technical Institute, 10/7, Sibirsky Trakt, 420029 Kazan, Russia.
4CSNSM, Batiment 108, IN2P3-CNRS, 91405 Orsay Campus, France.
5Kazan State University, 18, Kremlevskaya str., 420008 Kazan, Russia.

Ion Synthesis and FMR Studies of Cobalt and Iron Nanoparticles Implanted in Polyimides [RAMEEV]
P088 Bulat Z. Rameev1, F. Yildiz1, B. Aktas1, W. K. Park2, J.S. Moodera2, L. R. Tagirov3
1Gebze Institute of Technology, P.K. 141, 41400 Gebze-Kocaeli, Turkey.
2Francis Bitter Magnet Lab.,MIT, Cambridge, MA 02139, USA.
3Kazan State University, 420008 Kazan, Russia.
ESR Studies of Co Nanoparticles in TiO2 Thin Films [RAMEEV1]
P089 S. B. Orlinskii1, Rafail M. Rakhmatullin1, A. V. Kholodkov2, K. M. Golant2
1Kazan State University, MRS Laboratory, 18 Kremlevskaya, Kazan, Tatarstan 420008, Russia.
2Fiber Optics Research Center at GPI RAS, Moscow, Russia.
Electron spin echo study of erbium-doped SiO2 glass co-doped with F, N [RAKHMATULLIN]
P090 Rampi Ramprasad, Michael Sadd, Doug Roberts, Tom Remmel, Mark Raymond, Eric Luckowski, Sriram Kalpat, Carole Barron, Mel Miller
Motorola DigitalDNA Labs, 2100 E. Elliot Rd, EL 740, Tempe, AZ 85048, USA
O vacancy defects in tantalum pentoxide: a density functional study [RAMPRASAD1]
P091 V. Renugopalakrishnan1 and A. Strzelczyk2
1BioFold Inc., San Francisco, CA 94103, USA
2Harvard Medical School, Boston, MA 02115, USA
Next Generation Storage Devices [RENUGOPALAKRISHNAN]
P092 Neerish Revaprasadu
Department of Chemistry, University of Zululand, Private bag X1001, KwaDlangezwa, 3886, South Africa.
Synthesis of Nanoscaled Materials of Platinum, Palladium and Copper using Single-Molecule Precursors [REVAPRASADU]
P093 D. A. Zakheim, I. V. Rozhansky, S. A. Gurevich
A.F. Ioffe Institute, 26 Polytechnisheskya, St.Petersburg 194021, Russia.
Monte-Carlo simulation of electron transport and field effect in granulated metal nanostructures. [ROZHANSKY]
P094 Valery Ryazanov
Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432 Russia.
Josephson pi-junctions and their possible applications in digital and quantum logics. [RYAZANOV]
P095 Elena A. Rykova1, Andrey A. Knizhnik1, A. A. Bagaur'yants1, and Anatoli A. Korkin2
1KINETIC TECHNOLOGIES Ltd, Kurchatov Sq. 1, Moscow, 123182, Russia.
2Semiconductor Products Sector, Motorola, Mesa, AZ 85202.
Quantum-Chemical Study of the Mechanism of HfO2 Atomic Layer Deposition from HfCl4 and H2O Precursors [RYKOVA]
P096 Ilja A. Ryzhikov1, A. A. Pukhov1, A. S. Il'in1, N. P. Glukhova1, K. N. Afanasiev1, A. S. Ryzhikov2
1Institute of Theoretical and Applied Electromagnetics, Russian Academy of Sciences, 13/19 Ijorskaja, Moskow 125412, Russia
2Moscow State University, Chemistry Department, Leninskie Gory, GSP-3 Moscow 119899, Russia.
Anomalous temperature dependence of conductivity of nanoporous ITO films [RYZHIKOV]
P097 I. A. Ryzhikov1, A. L. Rakhmanov1, Y. V. Trofimov2
1Institute for Theoretical and Applied Electrodynamics RAS, 13/19, Izhorskaya, Moscow, 127412, Russia.
2Institute of Electronics National Acad. Sci. of Belorus, 220090 Minsk, Belorus.
Thex charge transport mechanisms and photoconductivity of nanoporous granular CdS-CdSe [RYZHIKOV1]
P098 L. Alekseeva1, A. Djachkov1, S. Maklakov1, I. Ryzhikov1, M. Sedova1, T. Furmanova1, N. Perov2
1Institute for Theoretical and Applied Electrodynamics RAS, 13/19, Izhorskaya, Moscow, 127412, Russia.
2Faculty of Physics, Moscow State University, Moscow 119899, Russia.
Low Temperature Dependence of HF-Magnetic Properties of Soft Nanostructured Films. [RYZHIKOV2]
P099 I. Ryzhikov, K. Afanasiev, E. Bondar, A. Djachkov, A. Iline, M. Sedova, L.Shadrina
Institute for Theoretical and Applied Electrodynamics RAS, 13/19, Izhorskaya, Moscow, 127412, Russia.
The Optical Characteristics of Three-Dimensional Nanostructural Metal-Organic Composite Thin Films [RYZHIKOV3]
P100 Melissa J. English, Anand Ramakrishnan and Ajit Sadana
Chemical Engineering Department, University of Mississippi, P.O. Box 1848, University, MS 38677, USA
A Fracatal Analysis of Analyte-Receptor Binding and Dissociation Kinetics in Microcantilever Biosensors [SADANA]
P101 Anand Ramakrishnan and Ajit Sadana
Chemical Engineering Department, P.O. Box 1848, University of Mississippi, University, MS 38677, USA
A Kinetic Study of Analyte-Receptor Binding and Dissociation for Biosensor Applications: A Fractal Analysis for Two Different DNA Systems [SADANA1]
P102 Evgeniy V. Saenko, S. G. Starodoubtsev, A. R. Khokhlov
Physics Department, M.V.Lomonosov Moscow State University, Leninsky Gory, Moscow 119992, Russia.
SYNTHESIS AND STUDY OF POLY(ACRYLAMIDE) GELS WITH EMBEDDED MAGNETITE NANOPARTICLES. [SAENKO]
P103 Michail I. Samoilovich1, Andrey V. Guryanov1, Michail Yu. Tsvetkov2
1Opalon, Moscow, Russia.
2Fiber Optics Research Center at GPI RAS, Moscow, Russia.
Artificial OPAL structures for 3D-optoelectronics [SAMOILOVICH]
P104 V. S. Dneprovskii, V. P Evtikhiev*, V. P. Kochereshko*, O. A. Shaligina, E. A. Zhukov
M. V. Lomonosov Moscow State University, Moscow, Russia.
*Ioffe Physico-Technical Institute RAS, St Petersburg, Russia.

Carrier Injection and Relaxation in Self-Assembled CdSe/ZnSe Quantum Dots [DNEPROVSKII]
P105 Artem O. Sboychakov1, A. L. Rakhmanov1, K. I. Kugel1, M. Yu. Kagan2, I.V. Brodsky2
1Institute for Theoretical and Applied Electrodynamics, Russian Academy of Sciences, Izhorskaya Str. 13/19, 125412 Moscow, Russia.
2P. L. Kapitza Institute for Physical Problems, Russian Academy of Sciences, Kosygina Str. 2, 117334 Moscow, Russia.
Nano-scale phase separation and tunneling magnetoresistance in manganites [SBOYCHAKOV]
P106 Boris I. Shapiro
Scientific Center NIIKHIMFOTOPROEKT, Moscow, Russia.
J-aggregates of cyanine dyes from the 4-th molecules: nanosized optical elements [SHAPIRO]
P107 Dmitry Shchukin, Igor Radchenko, Gleb Sukhorukov
Max Planck Institute of Colloids and Interfaces, 14424, Potsdam, Germany.
Synthesis of Magnetic Ferrites Inside Hollow Polyelectrolyte Capsules [SHCHUKIN]
P108 Konstantin P. Novoselov1, Denis B. Shirabaikin2, Stanislav Ya. Umanskii2, Maxim A. Deminsky2, Gleb V. Belov2, Andrey S. Petrusev2, Boris V. Potapkin2, and Anatoli A. Korkin3
1JSC Soft-Tec, Nakhimovskii prosp. 34, Moscow, 117218 Russia.
2Kintech, Kurchatov Sq. 1, Moscow, 123182 Russia.
3Semiconductor Products Sector, Motorola Inc., 2200 W. Broadway Rd, Mesa AZ 85202, USA
CHIMERA: a Software Tool for Reaction Rate Calculations and Kinetics and Thermodynamics Analysis [SHIRABAIKIN]
P109 V. M. Mikoushkin, V. V. Mamutin, S. E. Sysoev, Vladimir V. Shnitov, and Yu. S. Gordeev
Ioffe Physical-Technical Institute RAS, Polytechnicheskaya 26, St.-Petersburg, 194021, Russia.
Ion Stimulated Fabrication of Nanostructures Metal/Insulator/HT-Superconductor for Field Effect Transistor [SHNITOV1]
P110 withdrawn
P111 Theis I. Soelling1, Oliver Bunk1, Martin M. Nielsen1 Bo W. Laursen2, Thomas Bjørnholm2
1The Danish Polymer Center, Risø National Laboratories, Frederiksborgvej 399, 4000 Roskilde, Denmark.
2Nano-Science Center, Universitetsparken 5, 2100 Københanv Ø, Denmark.
Addressing Structural Order on Thin Organic Films: Surface X-ray Diffraction Studies of Spin-Cast HATNA [SOELLING]
P112 E. S. Soldatov1, S. P. Gubin2, I. A. Maximov3, G. B. Khomutov1, V. V. Kolesov4, A. N. Sergeev-Cherenkov1, V. V. Shorokhov1, K. S. Sulaimankulov5, D. B. Suyatin1
1Faculty of Physics, M.V. Lomonosov Moscow State University, 119992, Moscow, Russia.
2N.S. Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 119991, Moscow, Russia.
3Lund University, Solvegatan 14 A, S-223 62 LUND, Sweden.
4Institute of Radioengineering & Electronics, Russian Academy of Sciences, 103907, Moscow, Russia.
5Institute of Chemistry & Chemical Technology, National Academy of Sciences, 720071, Bishkek, Republic of Kirgistan.

Molecular cluster based nanoelectronics [SOLDATOV]
P113 E. V. Saenko1, S. G. Starodoubtsev1, A. R. Khokhlov1, V. V. Volkov2, K. A. Dembo2, V. V. Klechkovskaja2, E. V. Shtykova2
1Physics Department, M.V.Lomonosov Moscow State University, Leninsky Gory, Moscow 119992, Russia
2Institute of Crystallography, Russian Academy of Sciences, 59 Leninsky Pr., Moscow 117333, Russia.
Poly(acrylamide) gels with embedded magnetite nanoparticles [STARODOUBTSEV]
P114 Oleg V. Stognei1, Yu.E. Kalinin1, A. V. Sitnikov1, V. Wagner2, F. Ahlers2, E. Jens2
1Voronezh State Technical University, Voronezh, Russia.
2Phys. Tech. Bundesanstalt, Braunschweig, Germany.
REGIME OF COULOMB BLOCKADE IN GRANULAR CoFeB-SiO NANOCOMPOSITES [STOGNEI]
P115 Oleg V. Stognei, V. A. Slyusarev, Yu. E. Kalinin, A. V. Sitnikov, M. N. Kopitin
Voronezh State Technical University, Voronezh, Russia.
Change of The Electrical Properties of The Granular CoFeB-SiO Nanocomposities After Heat Treatment [STOGNEI1]
P116 Matthew Stoker, Tushar Merchant, Andrew Morton and Jill Hildreth
Advanced Modeling and Simulation, Motorola, Mesa, AZ 85202, USA
A Model of the Chemical Vapor Deposition of SiGe films from Silane and Germane [STOKER]
P117 Yu. F. Biryulin1, D. A. Syckmanov1, V. N. Zgonnik2
1Physics for Cluster Structures Lab, Ioffe Physico-Technical Institute, RAS, Polytechnicheskaya st. 26, 194021, St-Petersburg, Russia.
2Institute of Macromolecular Compounds, RAS.
The investigation of C60 state in fullerene-containing polymers. [SYCKMANOV]
P118 M. F. Aly, J. L. Park, M. Syed, Z. Hasan
Department of Physics, Temple University, Philadelphia, PA 19122, USA
MgS:Eu Thin Films by Laser Pulsed Vapor Deposition Technique for High density Memory Storage [SYED]
P119 B.Z. Rameev1,2, R.Yilgin1,2, B. Aktas1,2, and Lenar.R. Tagirov3
1Gebze Institute of Technology, P.K. 141, 41400 Gebze-Kocaeli, Turkey.
2A. Gupta IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA
3Kazan State University, 420008 Kazan, Russia.

FMR STUDIES OF CrO2 EPITAXIAL THIN FILMS [TAGIROV]
P120 withdrawn
P121 N. N. Gerasimenko1, V. Yu Troitskiy2
1Moscow Institute of Electronic Engeneering K-498 Laboratory of RadiationMethods of Technology and Analysis
2Scientific Research Institute for System Analysis, Nakhimovsky pr. 36-1 117218, Moscow, Russia.
Ion-Beam Synthesis of Si-Ge Nanostructures. [TROITSKI]
P122 withdrawn
P123 M. Yu. Kupriyanov1, M. Siegel2, and S. V. Vyshenski1
1Nuclear Physics Institute, Moscow State University, 119992 Moscow, Russia.
2Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany.

Controlled wave function rearrangement in nanostructures with ferromagnetic Josephson links [VYSHENSKI]
P124 Minoru Miyakoshi, Tsukuru Ohwaki, Koichi Yamashita
Department of Chemical System Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
A DFT Study of the Electronic Structure of a Pd Monolayer on an Au Electrode [YAMASITA]
P125 August Yurgens1, D. Winkler1,2
1Department of Microelectronics and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden.
2Institute of Microelectronics in Gothenburg, Arvid Hedvalls backe 4, 41133 Gothenburg, Sweden.
Molecular-sized intrinsic tunnel junctions [YURGENS]
P126 Vasily A. Zabelin, V. V. Kalaev
Soft-Impact Ltd. Saint-Petersburg, Russia.
Modeling of point defect formation in silicon monocrystal [ZABELIN]
P127 Serguei.V. Zaitsev-Zotov
Institute of Radioengineering and Electronics of Russian Academy of Sciences, 101999 Moscow, Mokhovaya 11, Russia.
Transport properties of TaS3 crystals of nanometer-scale transverse dimensions [ZAITSEV-ZOTOV]
P128 I. Zaporotskova1, N. Lebedev1, L. Chernozatonskii2
1Volgograd State University, 400062, 2-ya Prodolnaya 30, Volgograd, Russia.
2Institute of Biochemical Physics of RAS, 117334 Moscow, Russia.
Research of the processes of the internal and external hydrogenization of the single-walled carbon nanotubes [ZAPOROTSKOVA]
P129 R. J. Elliott1, E. M. Epshtein2, Yu. V. Gulyaev2, Peter E. Zilberman2
1University of Oxford, Department of Physics, Theoretical Physics, UK
2Institute of Radioengineering & Electronics of RAS, Fryazino Branch, Russia.
Cotton domain walls moving by current in magnetic junctions [ZILBERMAN]
P130 Evgenii V. Zharikov1, S.Yu. Tsarjova2, A.N. Kovalenko3, I.V. Anoshkin4
1Prof.D, Mendeleyev University of Chemical Technology of Russia/Miusskaya sq., 9, 125047, Moscow, Russia.
2Ph.D, Mendeleyev University of Chemical Technology of Russia/Miusskaya sq., 9, 125047, Moscow, Russia.
3Postgraduate student, Mendeleyev University of Chemical Technology of Russia/Miusskaya sq., 9, 125047, Moscow, Russia.
4StudentD, Mendeleyev University of Chemical Technology of Russia/Miusskaya sq., 9, 125047, Moscow, Russia.

Features of Carbon Nanotubes Formation on Nanosized Catalyst Particles [ZHARIKOV]
P131 Alexei A. Zolotukhin, A. O. Ustinov, A. P. Volkov, A. N. Obraztsov
Physics Department, Moscow State University, Moscow 119899, Russia.
In-situ plasma diagnostic for chemical vapor deposition of nano-carbon thin film materials [ZOLOTUKHIN]
P132 A. B. Zorin, S. V. Lotkhov, S. A. Bogoslovsky, J. Niemeyer
Physikalisch-Technische Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany.
Quantum coherent superconducting nano-circuits for metrology and quantum computing [ZORIN]