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 Printable Version
Preliminary Draft
Thursday, September 12, 2002
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| 12-PLEam |
Thursday,
September 12 -- Plenary Session I (8:00 - 12:00)
Chairmen: Anatoli Korkin and Andreas Wild
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8:00 -
8:30 |
Opening Ceremony
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8:30 -
9:00 |
Howard R. Huff,
Peter Zeitzoff, and Gennadi Bersuker
International SEMATECH, Austin, TX 78741, USA
Integrated electronics:
from conventional CMOS to the nanoscale technologies
[HUFF]
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9:00 -
9:30 |
Evgeni Gusev
IBM Semiconductor Research and Develoipment Center,
Thomas J. Watson Research Center, P.O. Box 218,
Yorktown Heights NY 10541, USA
Ultrathin gate dielectrics: recent progress and future challenges
[GUSEV]
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9:30 -
10:00 |
Boris A. Gurovich, D.I. Dolgiy, E.P. Velihov, E.Z. Meilikhov, and E.A. Kuleshova
RRC "Kurchatov Institute", 123182 Moscow, Kurchatov sq. 1, Russia.
Selective removal of atoms for fabrication of nanostructures with desireable
electric, magnetic and optical properties
[GUROVICH]
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10:00 -
10:30 |
Coffee Break
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10:30 -
11:00 |
Victor Ya Prinz
Institute of Semiconductor Physics, Ave Lavrenteva 13, Novosibirsk, 630090,
Russia.
New Concept in Fabricating Building Blocks for Nanoelectronics and
Nanomechanics
[PRINZ]
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11:00 -
11:30 |
Victor Ryzhii1,
Michael Shur2
1CSSP Lab., University of Aizu,
Aizu-Wakamatsu 965-8580, Japan.
2Dept. of ECSE, Rensselaer Polytechnic Institute,
Troy, New York 12180, USA
Terahertz Plasma Effects in Two-Dimensional Heterostructures
[RYZHII]
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11:30 -
12:00 |
Gabriel M Crean
NMRC, Lee Maltings, Prospect Row, Cork, Ireland.
Future nanoelectronics: challenges for science and technology
[CREAN]
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14:00 -
14:20 |
Mark L. Schattenburg
MIT Space Nanotechnology Laboratory, 70 Vassar Street, Cambridge,
MA 02139-4307, USA
The Critical Role of Metrology in Nanotechnology
[SCHATTENBURG]
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14:20 -
14:40 |
Roxann L. Engelstad and Edward G. Lovell
UW Computational Mechanics Center,
1513 University Ave.,
University of Wisconsin,
Madison, WI 53706, USA
Mask distortion issues for next generation lithography
[ENGELSTAD]
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14:40 -
15:00 |
Douglas J. Resnick, David P. Mancini, William J. Dauksher,
and Kevin Nordquist
Motorola Labs,
77000 South River Parkway, Tempe, AZ 85284, USA
Imprint Lithography for Nanofabrication
[RESNICK]
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15:00 -
14:30 |
Coffee Break |
15:30 -
15:50 |
E. Krasheninnikov, M. Deminsky, A. Knijnik, V. Rusanov, and
Boris Potapkin
RRC Kurchatov Institute, Moscow, 123182, Russia.
Plasma Assisted Processes of Thin Films and Nanostructures Growth
[POTAPKIN]
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15:50 -
16:10 |
Peter L.G. Ventzek, Marius Orlowski,
Shahid Rauf, Phillip Stout, and Da Zhang
Motorola Inc., Semiconductor Products Sector,
Austin TX 78721, USA.
Plasma Process Simulation for Semiconductor Manufacturing Applications
[VENTZEK]
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16:10 -
16:30 |
O. Joubert, L. Vallier,
G. Cunge, X. Detter, E. Pargon, J. Foucher
LTM/CNRS, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France.
Nanometer scale linewidth control during etching of polysilicon gates in
high-density plasmas
[JOUBERT]
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16:30 -
17:00 |
Coffee Break
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17:00 -
17:20 |
V. I. Emel'yanov
Physics Faculty, Moscow State University, 119899 Moscow, Russia.
Defect-deformational self-organization and nano-structuring of solid surfaces
[EMELYANOV]
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17:20 -
17:40 |
Gennady B. Khomutov1,
S. A. Pavlov1, A. Yu. Obydenov1,
A. N. Sergeev-Cherenkov1, Eugene S. Soldatov1,
S. P. Gubin2,
1Faculty of Physics, Moscow State University, Moscow, Russia.
2Institute of General and Inorganic Chemistry RAS, Moscow, Russia.
The design, fabrication and characterization of controlled-morphology
nanomaterials and functional planar nanostructures for nanoelectronics and
nanotechnology
[KHOMUTOV]
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17:40 -
18:00 |
Viktor A. Radzig
Institute of Chemical Physics, Russian Academy of Sciences,
Kosygina street 4, Moscow, 117977 Russia.
Design of Intermediates with Desired Structure on Activated Silica Surface
[RADZIG]
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18:00 -
18:20 |
Nicholas A. Kotov
Chemistry Department, Oklahoma State University,
Stillwater, OK 74078, USA
Layer-by-layer Assembled Films of Nanocolloids: Preparation of Multifunctional
and Highly Organized Materials
[KOTOV]
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14:00 -
14:30 |
David C. Gilmer
Motorola, Materials Development and Integration, Austin TX 78721, USA
Gate-stack materials compatibility challenges
[GILMER]
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14:30 -
15:00 |
Douglas A. Buchanan
Electrical and Computer Engineering, University of Manitoba, Winnipeg,
Manitoba R3T 5V6, Canada, and
IBM T.J. Watson Research Center,
P.O. Box 218, Kitchewan Rd.,
Yorktown Heights, NY 10598, USA
Metal gates for advanced cmos
[BUCHANAN]
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15:00 -
15:30 |
Coffee Break
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15:30 -
16:00 |
H.R. Huff, A. Agarwal, C. Lim, A. Hou, A. Jain,
P. J. Chen, P. Lysaght, J. Barnett, D. Riley, Y. Kim,
G. Bersuker, P. Zeitzoff, G.A. Brown, C. Young, J. Gutt, N. Chaudhary,
J. Tamim, M. I. Gardner, and R. W. Murto
International SEMATECH, Inc.,
Austin, TX 78741, USA
Challenges and Opportunities for Integration of High-k
Gate Stack Systems into Planar CMOS Process Flows
[HUFF2]
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16:00 -
16:30 |
Vladimir A. Gritsenko1 and K. A. Nasyrov2
1Institute of Semiconductor Physics, 630090, Novosibirsk,
Russia.
2Institute of Automation and Electrometry, 630090 Novosibirsk,
Russia.
Transport and defects in advanced gate dielectrics
[GRITSENKO]
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16:30 -
17:00 |
Coffee Break
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17:00 -
17:30 |
Takeo Hattori1,
K. Takahashi1, M. B. Seman1, and
K. Hirose2
1Musashi Institute of Technology, 1-28-1 Tamazutsumi,
Setagaya-ku, Tokyo 158-8557, Japan.
2Institute of Space and Astronautical Science, Japan.
Energy barrier for valence electrons at SiO2/Si(111) interface
[HATTORI]
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17:30 -
18:00 |
Sanjay Banerjee
Electrical and Computer Engineering, MER 1.606B/R9900, University of Texas,
Austin, TX 78712, USA
Bandgap and strain engineered si-ge-c vertical and planar mosfets
[BANERJEE]
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14:00 -
14:20 |
Evgeniy Golant and Andrey Pashkovskii
State Research and Production Corporation "Istok", Fryazino Moscow Distr.,
141195, Russia.
Quantum coherent transport phenomena in THz devices
[GOLANT]
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14:20 -
14:35 |
TBA |
14:35 -
14:50 |
Mauro F. Pereira Jr.1 and
H. Wenzel2
1Institut fuer Theoretische Physik,
Technische Universitaet Berlin,
Hardenbergstrasse 36, 10623 Berlin, Germany.
2Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik Berlin,
Rudower Chaussee 5, D-12489 Berlin, Germany.
The Influence of Many Body and Electron Nonparabolicity Effects in
the Intersubband Optical Spectra of III-V Quantum Wells.
[PEREIRA]
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14:50 -
15:05 |
P. G. Kryukov1, Yu. V. Larionov1,
A. A. Rybaltovskii1,
Konstantin A. Zagorul'ko1
,
A. Dragomir2, D. N. Nikogosyan2,
A. A. Ruth2
1Fiber Optics Research Center, General Physics Institute,
Russian Academy of Sciences, 38 Vavilov Street, 119991 Moscow, Russia.
2National University of Ireland, University College Cork,
Cork, Ireland.
Long-period fiber gratings fabrication with femtosecond pulse radiation
at different wavelengths
[ZAGORULKO]
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15:05 -
15:30 |
Coffee Break
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15:30 -
15:50 |
Tomi Jouhti, Chang Si Peng, Emil-Mihai Pavelescu, Janne Konttinen, Luis Aguiar
Gomes, Oleg Okhotnikov ,
and Markus Pessa
Tampere University of Technology,
Optoelectronics Research Centre,
P.O.Box 692,
Korkeakoulunkatu 3,
Tampere 33101, Finland.
Novel GaAs-based nitride and antimonide long-wavelength VCSELs
[OKHOTNIKOV]
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15:50 -
16:05 |
Pavel D. Altukhov
A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya st. 26,
194021 St. Petersburg, Russia.
Effective room-temperature silicon light emitters in optoelectronics
[ALTUKHOV1]
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16:05 -
16:20 |
Vladislav V. Dvoyrin1,
V. M. Mashinsky1, V. B. Neustruev1,
L. D. Iskhakova1, E. M. Dianov1,
V. V. Koltashev1, V. G. Plotnichenko1,
A. N. Guryanov2, and A. A. Umnikov2,
1Fiber Optics Research Center at the General
Physics Institute, Russian Academy of Sciences, 38 Vavilov street, 119991
Moscow, Russia.
2Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences,
49, Tropinin street, 603600 Nizhnii Novgorod, Russia.
Room-temperature luminescence in silicate chromium-doped optical fibers
[DVOYRIN]
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16:20 -
14:35 |
Andrey Lipatov1, A. Korneev1,
O. Okunev1, Galina Chulkova1,
K. Smirnov1, G. Gol'tsman1,
J. Zhang2, W. Slysz2, A. Verevkin2,
Roman Sobolewski2
1Department of Physics, Moscow State Pedagogical University,
Moscow, 119992, Russia.
2Department of Electrical and Computer Engineering and
Laboratory of Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA
GHz Counting Rate NbN Single-Photon Detector for IR Diagnostics of VLSI CMOS
Circuits
[LIPATOV]
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16:35 -
17:00 |
Coffee Break
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17:00 -
17:20 |
Konstantin Svidzinskiy
Optolink Ltd. & Genral Physics Institute,
Russan Academy of Sciences, Zelenograd, Moscow 103575, Russia.
Silicon–based Optical Integrated Circuits for Terabit-rate Optical Networks.
[SVIDZINSKIY]
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17:20 -
17:40 |
Yu. N. Korkishko1, V. A. Fedorov1,
S. M. Kostritskii1, A. N. Alkaev1,
E. I. Maslennikov1,
E. M. Paderin1, D. V. Apraksin1,
and F. Laurell2
1Moscow Institute of Electronic Technology,
103498 Moscow, Zelenograd, Russia.
2Department of Physics II, Royal Institute of Technology,
S-10044 Stockholm, Sweden.
Proton Exchanged LiNbO3 and LiTaO3 Optical Waveguides
and Integrated Optic Devices
[KORKISHKO]
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17:40 -
18:00 |
Victor G. Veselago
Moscow Institute of Physics and Technology,
Institute of General Physics,
Vernadskogo 11-222/
Moscow 199311, Russia.
Materials with negative index of refraction and their properties
[VESELAGO]
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14:00 -
14:30 |
Julian D. Gale1,
Emilio Artacho2,
Alberto Garcia3,
Javier Junquera4,
Pablo Ordejon5,
Daniel Sanchez-Portal6, and
Jose M. Soler7
1Department of Chemistry, Imperial College of Science,
Technology and Medicine, South Kensington, SW7 2AY, UK
2Department of Earth Sciences, University of Cambridge,
Downing St., Cambridge, CB2 3EQ, UK
3Departamento de Fisica de la Materia Condensada, Universidad
del Pais Vasco, Apt. 644, 48080 Bilbao, Spain.
4Institut de Physique, Batiment B5, Universite de Liege,
B-4000 Sart-Tilman, Belgium.
5Institut de Cienccia de Materials de Barcelona, CSIC,
Campus de la UAB, Bellaterra, 08193 Barcelona, Spain.
6Dep. de Fisica de Materiales and DIPC, Facultad de
Quimica, UPV/EHU, Apt. 1072, 20080 Donistia, Spain.
7Dep. de Fisica de la Materia Condensada, C-III, Universidad
Autonoma de Madrid, E-28049 Madrid, Spain.
Ab initio calculation at the nanoscale
[GALE]
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14:30 -
15:00 |
David Graves,
David Humbird, and Yoshie Kimura
University of California at Berkeley,
Chemical Engineering,
Gilman 201,
UC Berkeley,
Berkeley CA 94720, USA
Atomistic Simulations of Plasma-Surface Chemistry and Comparison to Experiment
[GRAVES]
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15:00 -
15:30 |
Coffee Break
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15:30 -
16:00 |
Marius Orlowski
DDL Laboratories, Motorola Inc.,
3501 Ed Bluestein Blvd, Austin, Texas 78721, USA
Microscopic Derivation of Zero-Flux Boundary Condition in 1-D Random Walk in
Presence of a Reflecting Barrier
[ORLOWSKI]
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16:00 -
16:15 |
Natalia Kirova1,2 ,
M.-N. Bussac1
1 CPHT, Ecole Polytechnique, 91128 Palaiseau, France.
2 POMA, Université Angers, 49045 Angers, France.
Field induced surface polarons in molecular crystals.
[KIROVA1]
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16:15 -
16:30 |
Leonardo R.C. Fonseca1, Anatoli Korkin1,
Xiaodong Zhang2, Alexander A. Demkov2, Andrey Knizhnik3
1Motorola Inc.,
Semiconductor Product Sector,
2200 W. Broadway,
Mesa, Arizona, United States, 85202
2Motorola Inc.,
Physical Sciences Research Laboratory,
7700 S. River Parkway,
Tempe, Arizona, United States, 85284
3Kintech Technologies Ltd,
Kurtchatov Square 1,
Moscow, Russia, 123182
Atomistic calculation of leakage current through ultra-thin metal-oxide
barriers
[FONSECA]
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16:30 -
17:00 |
Coffee Break
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17:00 -
17:20 |
Clemens J. Foerst1,2,
Peter E. Bloechl1,
and Karlheinz Schwarz2
1Institute for Theoretical Physics, Clausthal University
of Technology, Austria.
2Institute for Materials Chemistry,
Vienna University of Technology, Vienna, Austria.
Heteroepitaxial growth of high-k gate oxides on silicon: insights from
first-principles calculations
[FOERST]
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17:20 -
17:40 |
Andrey Knizhnik1, Alexander
Bagatur'yants1, Boris Potapkin1 and Anatoli Korkin2
1Kinetic Technologies, Kurchatov Sq. 1, 123182, Moscow,
Russia.
2Semiconductor Products Sector, Motorola Inc., 2200 W. Broadway Road, Mesa, AZ 85202, USA
Investigation of Zirconia Film Growth on the (001) Silicon Surface Using the
Integrated kMC-DR Approach
[KNIZHNIK]
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17:40 -
18:00 |
Jacob L. Gavartin, A. S. Foster,
V. B. Sulimov, F. Lopez Gejo, and A. L. Shluger
Department of Physics and Astronomy, University College London,
Gower Street, WC1E 6BT, London, UK
Oxygen and hydrogen defects in zirconia and hafnia: density functional
molecular dynamics approach.
[GAVARTIN]
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Friday, September 13, 2002
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| 13-PLEam |
Friday,
September 13 -- Plenary Session II (8:30 - 12:00)
Chairmen: Patrick Lenahan and Valery Ryazanov
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8:30 -
9:00 |
Roger Elliott
Theoretical Physics, Oxford University, UK
Spin-polarised current effects in magnetic tunnel junctions
[ELLIOTT]
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9:00 -
9:30 |
Mikhail V. Feigel'man2 and L. B. Ioffe1,2
1Center for Materials Theory,
Department of Physics and Astronomy, Rutgers University,
136 Frelinghuysen Rd, Piscataway NJ 08854, USA
2D.Landau Institute for Theoretical Physics, Kosygina 2,
Moscow, 117940 Russia.
Possible realization of an ideal quantum computer
in Josephson junction array.
[FEIGELMAN]
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9:30 -
10:00 |
Joanna Mirecki Millunchick
Department of Materials Science and Engineering, University of Michigan, Ann Arbor MI 48109, USA
Self-Assembly of Nanostructures in Compound Semiconductor
Thin Films by Morphological and Compositional Instabilities
[MIRECKI_MILLUNCHICK]
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10:00 -
10:30 |
Coffee Break
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10:30 -
11:00 |
Mitsuteru Inoue
Toyohashi University of Technology and JST-CREST, Japan.
Magnetophotonic crystals: Nano-scaled artifical magneto-optical materials
[INOUE]
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11:00 -
11:30 |
Detlev Grützmacher
Laboratory for Micro- and Nanotechnology,
Paul-Scherrer-Institut, 5232 Villigen-PSI, Switzerland.
New device concepts using sige quantum structures
[GRUETZMACHER]
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11:30 -
12:00 |
Massimiliano Di Ventra
Virginia Tech., Physics, Robeson Hall 0435, 209-A Robeson Hall,
Blacksburg VA 24061, USA
Electronic transport in nanoscale conductors
[DI_VENTRA]
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14:00 -
14:20 |
Sang-W. Cheong
Department of Physics and Astronomy, Rutgers University,
Piscataway, NJ 08854, USA
Nano correlations in novel magnets
[CHEONG]
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14:20 -
14:40 |
Alexander B. Granovsky
Department of Physics, Lomonosov Moscow State University, 119992 Moscow,
Russia.
Giant magnetooptical effects in nanostructured magnetic materials
[GRANOVSKY]
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14:40 -
15:00 |
Evgeny Z. Meilikhov
RRC "Kurchatov Institute", 123182 Moscow, Russia.
Lattices of ferromagnetic granules - theory and experiments
[MEILIKHOV]
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15:00 -
15:30 |
Coffee Break
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15:30 -
15:50 |
Alexander P. Popov
Moscow State Engineering Physics Institute,
115409 Moscow, Kashirskoe shosse, 31., Russia.
Magnetic Properties of the Rare-Earth and Transition Metal Clusters
[POPOV]
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15:50 -
16:10 |
Rampi Ramprasad, Peter Zurcher,
Michael Petras, Philippe Renaud, Mel Mill
Motorola DigitalDNA Labs, 2100 E. Elliot Rd, EL 740, Tempe, AZ 85048, USA
Fundamental limits of magnetic nanoparticle composites for high frequency
applications
[RAMPRASAD]
|
16:10 -
16:30 |
V.V.Ryazanov1,
V. A. Oboznov1, A. S. Prokofiev1,
V.V. Bol'ginov1, S.V.Dubonos2
1Institute of Solid State Physics, Russian Academy of Sciences.
Chernogolovka, Moscow district, 142432 Russia.
2Institute for Problems of Microelectronics Technology,
Russian Academy of Sciences, Chernogolovka, 142432, Russia.
Spin-polarized electron injection in mesoscopic SF-structures
[RYAZANOV1]
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16:30 -
17:00 |
Coffee Break
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17:00 -
17:15 |
Yu. L. Raikher,
V. I. Stepanov,
Institute of Continuum Media Mechanics, 1 Korolyev St., 614013, Perm, Russia.
Nonlinear dynamic susceptibilities of superparamagnetic nanoparticles
[RAIKHER]
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17:15 -
17:30 |
Andrey A. Fraerman
Institute for Physics of Microstructures RAS,
GSP-105 Nizhny Novgorod, Russia.
Ferromagnetic nanoparticles:collective behavior and josephson magnetometer
measurements
[FRAERMAN]
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17:30 -
17:45 |
J. M. Lee1, J. Y. Chang1,
K. I. Lee1, S. H. Han1,
H. J. Kim1,
Wooyoung. Y. Lee1*,
M. C. Park2, K. S. Huh2,
and J. M. Myoung2
1Nano Device Research Center, Korea Institute of Science
and Technology,
POB 131, Seoul, 130-650, Korea.
2Information & Electronic Materials Research Laboratory,
Department of Materials Science and Engineering, Yonsei University,
134 Shinchon-Dong, Seoul 120-749, Korea.
*
Ferromagnetic ordering of n-type (Ga,Mn)N epitaxial films
[LEE]
|
17:45 -
18:00 |
Lenar R. Tagirov1,
B. P. Vodopyanov2, K. B. Efetov3,4
1Kazan State University, 420008 Kazan, Russia.
2Kazan Physico-Technical Institute of RAS, 420029 Kazan,
Russia.
3Ruhr Universitdt Bochum, 44780 Bochum, Germany.
4L.D. Landau Institute for Theoretical Physics,
117940 Moscow, Russia.
Giant magnetoresistance in nanosize point contacts
[TAGIROV1]
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14:00 -
14:20 |
Gennadi Bersuker1,
Anatoli Korkin2, and Howard R. Huff1
1International Sematech, Austin, TX 78741, USA
2Advanced System Research Lab, Motorola Inc., Mesa,
AZ 85202, USA
Localized states in degradation of thin gate oxides
[BERSUKER]
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14:20 -
14:40 |
Patrick M. Lenahan
The Pennsylvania State University, Materials Science,
University Park, PA 16802, USA
The Structure of Atomic Scale Defects Involved in MOS Reliability Problems
[LENAHAN1]
|
14:40 -
15:00 |
Alex A. Volinsky
Motorola, Digital DNA Labs, Process and Materials
Characterization Lab, Mesa, AZ 85202, USA
Nanoindentaion Techniques for Assessing Mechanical Reliability at Nanoscale
[VOLINSKY]
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15:00 -
15:30 |
Coffee Break
|
15:30 -
16:00 |
Supratik Guha,
Lars-Ake Ragnarsson, Vijay Narayanan, Nestor A. Bojarczuk
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
Insulating oxides on silicon by molecular beam epitaxy for gate dielectric and
novel applications.
[GUHA]
|
16:00 -
16:30 |
Kaupo Kukli
University of Helsinki, Department of Chemistry, P. O. Box 55,
FIN-00014 Helsinki, Finland, and
University of Tartu, Institute of Experimental Physics and Technology, Tähe 4,
EE-51010 Tartu, Estonia.
Atomic layer deposition chemistry of CMOS dielectric materials.
[KUKLI]
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16:30 -
17:00 |
Coffee Break
|
17:00 -
17:20 |
Susanne Stemmer
Materials Department, University of California, Santa Barbara, CA 93106, USA
Scanning Transmission Electron Microscopy of Alternative Gate Dielectrics
[STEMMER]
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17:20 -
17:40 |
Harald F. Okorn-Schmidt
IBM T.J. Watson Research Center,
P.O. Box 218, Yorktown Heights, NY 10598, USA
Characterization of Alternative Gate Dielectrics:
Surfaces, Interfaces and Materials
[OKORN-SCHMIDT]
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17:40 -
18:00 |
Alexander A. Bagatur'yants1 and A.A. Korkin2
1KINETIC TECHNOLOGIES Ltd, Moscow, Russia.
2Semiconductor Products Sector, Motorola Inc., AZ 85202, USA
ZrO2 and HfO2 as alternative gate dielectrics:
similarities and dissimilarities
[BAGATURYANTS]
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14:00 -
14:30 |
Yu. E. Lozovik, S. P. Merkulova,
A. V. Minogin, A. M. Popov
Institute of Spectroscopy of Russian Academy of Science,
142190, Troitsk, Moscow region, Russia.
Nanomachines Based on Carbon Nanotubes
[LOZOVIK]
|
14:30 -
15:00 |
Alexander M. Bratkovsky
Hewlett-Packard Labs, Quantum Sciences, 1501 Page Mill Rd, Palo Alto,
CA 94304, USA
Transport of single electrons and bound electron pairs in molecular films
and wires (rectification, switching, and hysteresis)
[BRATKOVSKY]
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15:00 -
15:30 |
Coffee Break
|
15:30 -
16:00 |
Nicholas G. Rambidi
International Research Institute for Management
Sciences, Physics Department, Moscow State University, Russia.
Lure of molecular electronics - from molecular switches to distributed
molecular information processing media.
[RAMBIDI]
|
16:00 -
16:30 |
Konstantin K. Likharev
Stony Brook University, Sony Brook, NY 11794, USA
Possible Molecular Self-Evolving Neuromorphic Networks
[LIKHAREV1]
|
16:30 -
17:00 |
Coffee Break
|
17:00 -
17:30 |
Nikolai A. Kiselev
Institute of Crystallography RAS, Moscow, 117333, Russia.
Progress in carbon nanotubes characterization by HREM
[KISELEV]
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17:30 -
18:00 |
A. Dideykin1,
G. N. Fursey2,
A Vul'1
1Ioffe Physico-Technical Institute, St.Petersburg, Russia.
2Surface Physics and Electronics Research Center,
St-Petersburg University of Telecommunications,
St. Petersburg, Russia.
Nanodiamonds as
a new material for vacuum microelectronics
[FURSEY]
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17:30 -
18:00 |
Robert E. Berls, Jr.
Nuclear Threat Initiative, 1747 Pennsylvania Avenue NW, Suite 700,
Washington, DC 20006, USA
The Nuclear Threat Initiative
[BERLS]
|
14:30 -
15:00 |
Steven Watson
Elsevier Science, Mathematics & Computer Science,
Sara Burgerhartstraat 25, Amsterdam 1055KV, The Netherlands.
Increasing the visibility and citability of your research articles
[WATSON]
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15:00 -
15:30 |
Coffee Break
|
15:30 -
16:00 |
Tariel Makhviladze
JSC SOFT-TEC, Nakhimovsky prospect, 34,
Moscow 117218, Russia.
10 Years of Modeling and Simulation R&D with Motorola
[MAKHVILADZE]
|
16:00 -
16:30 |
Alexei V. Nikolaev
Samsung Electronics Co., Ltd., Representative Office in Russia, Research
1, Str. 2, B. Gnezdnikovsky Per., Moscow, 103009, Russia.
Samsung's Strategy for Nanotechnology and
Research Collaboration in Russia
[NIKOLAEV]
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16:30 -
17:00 |
Coffee Break
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17:00 -
18:00 |
Panel discussion
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| 13-BANev |
Friday,
September 13 -- Banquet (19:00 - 22:00)
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